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? AUIRGPS4070D0 g c e gate collector emitter automotive grade parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 240 ? a i c @ t c = 100c continuous collector current 160 i nominal nominal current 120 i cm pulse collector current, v ge = 15v 360 i lm clamped inductive load current, v ge = 20v ? 480 i f nominal diode nominal current ? 120 ? i fm diode maximum forward current ? 480 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 750 w p d @ t c = 100c maximum power dissipation 375 t j operating junction and -55 to +175 ? t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) c absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to t he device. these are stress rat- ings only; and functional operati on of the device at these or any other condition bey ond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for ex tended periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board m ounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. e g n-channel c ? ? base part number ? package type ? standard pack orderable part number form quantity AUIRGPS4070D0 super-247 tube 25 AUIRGPS4070D0 1 2016-12-12 super-247a *? qualification standards can be found at www.infineon.com ? insulated gate bipolar transistor with ultraf ast soft recovery diode thermal resistance parameter typ. max. units r ? jc (igbt) thermal resistance junction-to-case (each igbt) ? ??? 0.20 r ? jc (diode) thermal resistance junction-to-case (each diode) ? ??? 0.45 r ? cs thermal resistance, case-to-sink (flat, greased surface) 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 c/w ? features ? low v ce (on) trench igbt technology ? low switching losses ? 6s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? ? positive v ce (on) temperature coefficient ? soft recovery co-pak diode ? lead-free, rohs compliant ? automotive qualified * benefits ? high efficiency in a wide range of applications ? suitable for applications in the low to mid-range frequencies ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi v ces = 600v i c = 160a , t c = 100c tsc ?? 6s, t j(max) = 175c v ce(on) typ . = 1.70v c e g c
? AUIRGPS4070D0 2 2016-12-12 electrical characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ?? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.74 ? v/c v ge = 0v, i c = 5ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.0 v i c = 120a, v ge = 15v, t j = 25c ? 2.0 ? i c = 120a, v ge = 15v, t j = 150c ? 2.1 ? i c = 120a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 5.6ma ? v ge(th) / ? tj threshold voltage temp. coefficient ? -16 ? mv/c v ce = v ge , i c = 5.6ma (25c-175c) gfe forward transconductance ? 87 ? s v ce = 50v, i c = 120a collector-to-emitter leakage current ? 1.0 200 a v ge = 0v, v ce = 600v ? 2.0 ? ma v ge = 0v, v ce = 600v,t j = 175c v fm diode forward voltage drop ? 1.8 2.1 v i f = 120a ? 1.9 ? i f = 120a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v i ces switching characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 250 375 nc i c = 120a q ge gate-to-emitter charge (turn-on) ? 65 98 v ge = 15v q gc gate-to-collector charge (turn-on) ? 100 150 v cc = 400v e on turn-on switching loss ? 5.7 6.7 mj e off turn-off switching loss ? 4.2 5.2 e total total switching loss ? 9.9 11.9 i c = 120a, v cc = 400v, v ge = 15v t d(on) turn-on delay time ? 40 60 ns r g = 4.7 ? , l = 87h, t j = 25c t r rise time ? 125 155 energy losses include tail & diode t d(off) turn-off delay time ? 140 170 reverse recovery t f fall time ? 120 170 e on turn-on switching loss ? 6.4 ? mj e off turn-off switching loss ? 4.7 ? e total total switching loss ? 11.1 ? i c = 120a, v cc = 400v, v ge = 15v t d(on) turn-on delay time ? 40 ? ns r g = 4.7 ? , l = 87h, t j = 175c t r rise time ? 110 ? energy losses include tail & diode t d(off) turn-off delay time ? 160 ? reverse recovery t f fall time ? 125 ? c ies input capacitance ? 7600 ? pf v ge = 0v c oes output capacitance ? 510 ? v cc = 30v c res reverse transfer capacitance ? 230 ? f = 1.0mhz t j = 175c, i c = 480a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 4.7 ? , v ge = +20v to 0v scsoa short circuit safe operating area 6 ? ? v cc = 400v, vp 600v rg = 5.0 ? , v ge = +15v to 0v erec reverse recovery energy of the diode ? 1740 ? j t j = 175c t rr diode reverse recovery time ? 210 ? ns v cc = 400v, i f = 120a i rr peak reverse recovery current ? 45 ? a v ge = 15v, rg = 4.7 ? , l = 87h s notes: ? v cc = 80% (v ces ), v ge = 20v, l = 3.5h, r g = 47 ? tested in production ilm ? 400a. ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j approximately 90c. ?? calculated continuous current based on maximum allowable ju nction temperature. package igbt current limit is 195a. package diode current limit is120a. note that current limit ations arising from heating of the device leads may occur.
? AUIRGPS4070D0 3 2016-12-12 fig. 6 - typ. igbt output characteristics t j = 25c; tp = 20s 0 20 40 60 80 100 120 140 160 180 t c (c) 0 100 200 300 400 500 600 700 800 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 4 - reverse bias soa t j = 175c; v ge = 20v fig. 2 - power dissipation vs. case temperature 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec 0 2 4 6 8 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 3 - forward soa t c = 25c, t j ? 175c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 i c ( a ) fig. 1 - maximum dc collector current vs. case temperature
? AUIRGPS4070D0 4 2016-12-12 fig. 12 - typ. transfer characteristics vce = 50v; tp = 20s fig. 10 - typical v ce vs. v ge t j = 25c 0 2 4 6 8 10 v ce (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 60 120 180 240 300 360 420 480 i f ( a ) -40c 25c 175c 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a fig. 8 - typ. diode forward characteristics tp = 20s fig. 9 - typical v ce vs. v ge t j = -40c 468101214 v ge (v) 0 60 120 180 240 300 360 420 480 i c e ( a ) tj = -40c t j = 25c t j = 175c 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a fig. 7 - typ. igbt output characteristics t j = 175c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 60a i ce = 120a i ce = 195a fig. 11 - typical v ce vs. v ge t j = 175c
? AUIRGPS4070D0 5 2016-12-12 fig. 15 - typ. energy loss vs. r g t j = 175c; l = 0.087mh; v ce = 400v, i ce = 120a; v ge = 15v fig. 18 - typ. diode i rr vs. r g t j = 175c fig. 16 - typ. switching time vs. r g t j = 175c; l = 0.087mh; v ce = 400v, i ce = 120a; v ge = 15v 0 50 100 150 200 250 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 10 20 30 40 50 60 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 14 - typ. switching loss vs. i c t j = 175c; l = 0.087mh; v ce = 400v, r g = 4.7 ? ; v ge = 15v 0 50 100 150 200 250 i f (a) 20 25 30 35 40 45 i r r ( a ) r g = 50 ? r g = 20 ? r g = ??? r g = 4.7 ? fig. 17 - typ. diode i rr vs. i f t j = 175c 0 10 20 30 40 50 60 r g ( ?? 20 25 30 35 40 45 i r r ( a ) 0 50 100 150 200 250 i c (a) 0 5 10 15 20 25 e n e r g y ( m j ) e off e on 0 102030405060 rg ( ? ) 0 2 4 6 8 10 12 14 16 e n e r g y ( m j ) e off e on fig. 13 - typ. energy loss vs. i c t j = 175c; l = 0.087mh; v ce = 400v, r g = 4.7 ? ; v ge = 15v
? AUIRGPS4070D0 6 2016-12-12 fig. 24 - typical gate charge vs. v ge i ce = 120a 200 400 600 800 di f /dt (a/s) 20 25 30 35 40 45 i r r ( a ) 50 100 150 200 250 i f (a) 500 1000 1500 2000 2500 3000 e n e r g y ( j ) r g = 20 ? r g = 4.7 ? r g = 50 ? r g = 10 ? fig. 19 - typ. diode i rr vs. dif/dt v cc = 400v; v ge = 15v; i f = 120a; t j = 175c 300 400 500 600 700 800 di f /dt (a/s) 3000 4000 5000 6000 7000 8000 9000 10000 q r r ( n c ) 4.7 ? 10 ? 50 ? 20 ? 60a 120a 240a 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 21 - typ. diode e rr vs. i f t j = 175c 0 50 100 150 200 250 300 q g , total gate charge (nc) 0 4 8 12 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v vces = 300v fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 9 10111213141516 v ge (v) 4 8 12 16 20 24 t i m e ( s ) 200 400 600 800 1000 1200 c u r r e n t ( a ) t sc i sc fig. 20 - typ. diode q rr vs. dif/dt v cc = 400v; v ge = 15v; t j = 175c
? AUIRGPS4070D0 7 2016-12-12 fig 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.00442 0.000014 0.04530 0.000165 0.08912 0.004938 0.06121 0.026150 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.00948 0.000013 0.12750 0.000134 0.18573 0.003167 0.12730 0.020010 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
? AUIRGPS4070D0 8 2016-12-12 ? 0 1k vcc dut l gate charge circuit l rg 80 v dut vcc + - rbsoa circuit fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg vcc dut / driver diode clamp / dut -5v switching loss rg vcc dut r = vcc icm fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit dc 4x dut vcc r sh fig.c.t.3 - s.c. soa circuit g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit
? AUIRGPS4070D0 9 2016-12-12 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -30 0 30 60 90 120 150 180 -100 0 100 200 300 400 500 600 00.511.5 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -30 0 30 60 90 120 150 180 -100 0 100 200 300 400 500 600 00.511.5 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -60 -40 -20 0 20 40 60 80 100 120 140 -0.40 0.10 0.60 1.10 i f (a) time (s) peak i rr t rr q rr -400 0 400 800 1200 1600 2000 -100 0 100 200 300 400 500 -4.000.004.008.0012.00 ice (a) vce (v) time (us) v ce i ce
? AUIRGPS4070D0 10 2016-12-12 case outline and dimensions-super-247 (dimensions are shown in millimeters (inches)) super-247(to-274aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ywwa xx ? xx date code y = year ww = work week a = automotive, lead free aups4070d0 lot code part number ir logo
? AUIRGPS4070D0 11 2016-12-12 ? highest passing voltage. qualification information qualification level automotive (per aec-q101) this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level ? super-247 n/a ? esd ? human body model ? class h3b( +/ \? 8000) ? aec-q101-001 class c3 ( +/ \? 2000) ? aec-q101-005 rohs compliant yes charged device model ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a wr itten document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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